Abstract
We advance spin noise spectroscopy to an ultrafast tool to resolve high-frequency spin dynamics in semiconductors. The optical nondemolition experiment reveals the genuine origin of the inhomogeneous spin dephasing in -doped GaAs wafers at densities at the metal-to-insulator transition. The measurements prove in conjunction with depth-resolved spin noise measurements that the broadening of the spin dephasing rate does not result from thermal fluctuations or spin-phonon interaction, as suggested previously, but from spatial -factor variations.
- Received 4 September 2009
DOI:https://doi.org/10.1103/PhysRevB.81.121202
©2010 American Physical Society
Synopsis
Noisy spins
Published 19 April 2010
Ever present fluctuations in semiconductors can be utilized as a demolition-free spectroscopic probe to study ultrafast spin dynamics.
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