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Gigahertz spin noise spectroscopy in n-doped bulk GaAs

Georg M. Müller, Michael Römer, Jens Hübner, and Michael Oestreich
Phys. Rev. B 81, 121202(R) – Published 31 March 2010
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Abstract

We advance spin noise spectroscopy to an ultrafast tool to resolve high-frequency spin dynamics in semiconductors. The optical nondemolition experiment reveals the genuine origin of the inhomogeneous spin dephasing in n-doped GaAs wafers at densities at the metal-to-insulator transition. The measurements prove in conjunction with depth-resolved spin noise measurements that the broadening of the spin dephasing rate does not result from thermal fluctuations or spin-phonon interaction, as suggested previously, but from spatial g-factor variations.

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  • Received 4 September 2009

DOI:https://doi.org/10.1103/PhysRevB.81.121202

©2010 American Physical Society

Synopsis

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Noisy spins

Published 19 April 2010

Ever present fluctuations in semiconductors can be utilized as a demolition-free spectroscopic probe to study ultrafast spin dynamics.

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Authors & Affiliations

Georg M. Müller*, Michael Römer, Jens Hübner, and Michael Oestreich

  • Institut für Festkörperphysik, Leibniz Universität Hannover, Appelstraße 2, D-30167 Hannover, Germany

  • *mueller@nano.uni-hannover.de

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Issue

Vol. 81, Iss. 12 — 15 March 2010

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