Abstract
We demonstrate an exchange bias in (Ga,Mn)As induced by antiferromagnetic coupling to a thin overlayer of Fe. Bias fields of up to 240 Oe are observed. Using element-specific x-ray magnetic circular dichroism measurements, we distinguish a strongly exchange-coupled (Ga,Mn)As interface layer in addition to the biased bulk of the (Ga,Mn)As film. The interface layer remains polarized at room temperature.
- Received 12 November 2009
DOI:https://doi.org/10.1103/PhysRevB.81.104402
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