Valence band structure of the icosahedral Ag-In-Yb quasicrystal

H. R. Sharma, G. Simutis, V. R. Dhanak, P. J. Nugent, C. Cui, M. Shimoda, R. McGrath, A. P. Tsai, and Y. Ishii
Phys. Rev. B 81, 104205 – Published 18 March 2010

Abstract

The valence band structure of the icosahedral (i) Ag-In-Yb quasicrystal, which is isostructural to the binary i-Cd-Yb system, is investigated by ultraviolet photoemission spectroscopy (UPS). Experimental results are compared with electronic-structure calculations of a cubic approximant of the same phase. UPS spectra from the fivefold, threefold, and twofold i-Ag-In-Yb surfaces reveal that the valence band near to the Fermi level is dominated by Yb4f-derived states, in agreement with calculations. The spectra also exhibit peaks which are surface core level shifted, caused by changes in the electronic structure in surface layers. Calculations yield a pseudogap in the density of states due to a hybridization of the Yb5d band with the Ag5p and In5p bands. Both experimental and calculated band features are very similar to those of Cd-Yb. The modification of the band structure after surface treatment by sputtering and by oxidation is also studied. Additionally, the work function of i-Ag-In-Yb measured from the width of UPS spectrum is found to be almost unaffected by surface orientation, but increases after sputtering or oxidation.

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  • Received 8 January 2010

DOI:https://doi.org/10.1103/PhysRevB.81.104205

©2010 American Physical Society

Authors & Affiliations

H. R. Sharma1,*, G. Simutis1, V. R. Dhanak1, P. J. Nugent1, C. Cui2, M. Shimoda3, R. McGrath1, A. P. Tsai2,3, and Y. Ishii4

  • 1Surface Science Research Centre and Department of Physics, The University of Liverpool, Liverpool L69 3BX, United Kingdom
  • 2Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, Japan
  • 3National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
  • 4Department of Physics, Chuo University, Kasuga, Tokyo 112-8551, Japan

  • *Corresponding author; h.r.sharma@liv.ac.uk

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Vol. 81, Iss. 10 — 1 March 2010

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