Optical bandpass switching by modulating a microcavity using ultrafast acoustics

T. Berstermann, C. Brüggemann, M. Bombeck, A. V. Akimov, D. R. Yakovlev, C. Kruse, D. Hommel, and M. Bayer
Phys. Rev. B 81, 085316 – Published 12 February 2010

Abstract

We present time-resolved reflectivity spectra of the cavity mode in a II-VI semiconductor based planar microcavity that is modulated by a strain pulse injected using an ultrafast acoustics technique. The modulation occurs when the strain pulse passes interfaces of the layered cavity structure at which the electric field has an antinode. Maximum modulation is reached when the pulse enters or leaves the central cavity layer. The mode shifts in the cavity with a finesse of about 2000 are comparable to its mode linewidth, which shows that the proposed technique is prospective for ultrafast optical switching.

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  • Received 29 September 2009

DOI:https://doi.org/10.1103/PhysRevB.81.085316

©2010 American Physical Society

Authors & Affiliations

T. Berstermann1, C. Brüggemann1, M. Bombeck1, A. V. Akimov2,3, D. R. Yakovlev1,3, C. Kruse4, D. Hommel4, and M. Bayer1

  • 1Experimentelle Physik 2, Technische Universität Dortmund, D-44227 Dortmund, Germany
  • 2School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom
  • 3A.F. Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia
  • 4Institut für Festkörperphysik, Abteilung Halbleiterepitaxie, Universität Bremen, 28359 Bremen, Germany

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Issue

Vol. 81, Iss. 8 — 15 February 2010

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