Abstract
We identify a dominant light-emitting center in ion-implanted for which the lattice damage has been completely healed, according to x-ray diffraction and Rutherford backscattering spectrometry measurements, by high-temperature, high-pressure annealing. This center is likely to be the isolated substitutional defect. It lacks a “subgap” excitation band and therefore has no state in the GaN band gap, shows threefold splitting of its level, with two sublevels nearly degenerate, and exhibits a long, single-exponential luminescence decay. Competing luminescent centers of GaN:Eu involve this prime center with intrinsic lattice defects, one of which may also be responsible for the GaN yellow band.
- Received 2 September 2009
DOI:https://doi.org/10.1103/PhysRevB.81.085209
©2010 American Physical Society