Identification of the prime optical center in GaN:Eu3+

I. S. Roqan, K. P. O'Donnell, R. W. Martin, P. R. Edwards, S. F. Song, A. Vantomme, K. Lorenz, E. Alves, and M. Boćkowski
Phys. Rev. B 81, 085209 – Published 10 February 2010

Abstract

We identify a dominant light-emitting center in ion-implanted GaN:Eu3+ for which the lattice damage has been completely healed, according to x-ray diffraction and Rutherford backscattering spectrometry measurements, by high-temperature, high-pressure annealing. This center is likely to be the isolated substitutional EuGa defect. It lacks a “subgap” excitation band and therefore has no state in the GaN band gap, shows threefold splitting of its F72 level, with two sublevels nearly degenerate, and exhibits a long, single-exponential luminescence decay. Competing luminescent centers of GaN:Eu involve this prime center with intrinsic lattice defects, one of which may also be responsible for the GaN yellow band.

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  • Received 2 September 2009

DOI:https://doi.org/10.1103/PhysRevB.81.085209

©2010 American Physical Society

Authors & Affiliations

I. S. Roqan1, K. P. O'Donnell1, R. W. Martin1, P. R. Edwards1, S. F. Song2, A. Vantomme2, K. Lorenz3, E. Alves3, and M. Boćkowski4

  • 1SUPA, Department of Physics, University of Strathclyde, Glasgow G4 0NG, Scotland, United Kingdom
  • 2IKS-KUL, Leuven 3000, Belgium
  • 3Instituto Tecnológico e Nuclear, 2686-953 Sacavém, Portugal
  • 4UNIPRESS, Polish Academy of Sciences, Warsaw 01-142, Poland

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Vol. 81, Iss. 8 — 15 February 2010

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