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Inelastic scattering and heating in a molecular spin pump

Jonas Fransson and Michael Galperin
Phys. Rev. B 81, 075311 – Published 17 February 2010

Abstract

We consider a model for a spin field-effect molecular transistor, where a directed pure spin current is controlled by an external electric field. Inelastic scattering effects of such molecular device are discussed within a framework of full counting statistics for a multilevel molecular system. We propose that the heating of the molecular junction can be controlled by external electric and magnetic fields. Characteristic features of the model are demonstrated by numerical calculations.

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  • Received 28 September 2009

DOI:https://doi.org/10.1103/PhysRevB.81.075311

©2010 American Physical Society

Authors & Affiliations

Jonas Fransson1 and Michael Galperin2

  • 1Department of Physics and Materials Science, Uppsala University, P.O. Box 530, SE-751 21 Uppsala, Sweden
  • 2Department of Chemistry and Biochemistry, University of California–San Diego, La Jolla, California 92093, USA

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Issue

Vol. 81, Iss. 7 — 15 February 2010

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