I-II-V half-Heusler compounds for optoelectronics: Ab initio calculations

David Kieven, Reiner Klenk, Shahab Naghavi, Claudia Felser, and Thomas Gruhn
Phys. Rev. B 81, 075208 – Published 11 February 2010

Abstract

Half-Heusler compounds XYZ crystallize in the space group F4¯3m and can be viewed as a zinc-blende-like (YZ) lattice partially filled with He-like X+ interstitials. In this work, we investigated I-II-V (eight-electrons) half-Heusler compounds by first-principles calculations in order to find suitable semiconductors for optoelectronics such as Cd-free buffer layer materials for chalcopyrite-based thin-film solar-cell devices. We report a systematic examination of band gaps and lattice parameters, depending on the electronegativities and the ion radii of the involved elements. Half-Heusler buffer materials should have a band gap of more than 2 eV to avoid absorption losses and a lattice constant of about 5.9Å to match the crystal structure of the absorber material. With these criteria we selected seven half-Heusler compounds as candidates for a buffer layer material.

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  • Received 22 October 2009

DOI:https://doi.org/10.1103/PhysRevB.81.075208

©2010 American Physical Society

Authors & Affiliations

David Kieven and Reiner Klenk

  • Helmholtz Zentrum Berlin für Materialien und Energie, Glienicker Str. 100, 14109 Berlin, Germany

Shahab Naghavi, Claudia Felser, and Thomas Gruhn*

  • Institut für Anorganische Chemie und Analytische Chemie, Johannes Gutenberg Universität, Staudinger Weg 9, 55099 Mainz, Germany

  • *gruhn@uni-mainz.de

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Issue

Vol. 81, Iss. 7 — 15 February 2010

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