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Three-fold diffraction symmetry in epitaxial graphene and the SiC substrate

D. A. Siegel, S. Y. Zhou, F. El Gabaly, A. K. Schmid, K. F. McCarty, and A. Lanzara
Phys. Rev. B 80, 241407(R) – Published 10 December 2009

Abstract

The crystallographic symmetries and spatial distribution of stacking domains in graphene films on 6H-SiC(0001) have been studied by low-energy electron diffraction and dark-field imaging in a low-energy electron microscope. We find that the graphene diffraction spots from two and three atomic layers of graphene have three-fold symmetry consistent with AB (Bernal or rhombohedral) stacking of the layers. On the contrary, graphene diffraction spots from the buffer layer and monolayer graphene have apparent six-fold symmetry, although the three-fold nature of the satellite spots indicates a more complex periodicity in the graphene sheets.

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  • Received 8 October 2009

DOI:https://doi.org/10.1103/PhysRevB.80.241407

©2009 American Physical Society

Authors & Affiliations

D. A. Siegel1,2, S. Y. Zhou1,2, F. El Gabaly3, A. K. Schmid2, K. F. McCarty3, and A. Lanzara1,2,*

  • 1Department of Physics, University of California, Berkeley, California 94720, USA
  • 2Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
  • 3Sandia National Laboratories, Livermore, California 94551, USA

  • *Author to whom correspondence should be addressed; alanzara@lbl.gov

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Vol. 80, Iss. 24 — 15 December 2009

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