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Graphene growth by metal etching on Ru(0001)

E. Starodub, S. Maier, I. Stass, N. C. Bartelt, P. J. Feibelman, M. Salmeron, and K. F. McCarty
Phys. Rev. B 80, 235422 – Published 15 December 2009

Abstract

Low-energy electron microscopy reveals a mode of graphene growth on Ru(0001) in which Ru atoms are etched from a step edge and injected under a growing graphene sheet. Based on density-functional calculations, we propose a model wherein injected Ru atoms form metastable islands under the graphene. Scanning tunneling microscopy reveals that dislocation networks exist near step edges, consistent with some of the injected atoms being incorporated into the topmost Ru layer, thereby increasing its density

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  • Received 11 September 2009

DOI:https://doi.org/10.1103/PhysRevB.80.235422

©2009 American Physical Society

Authors & Affiliations

E. Starodub1,*, S. Maier2, I. Stass2,3, N. C. Bartelt1, P. J. Feibelman4, M. Salmeron2, and K. F. McCarty1,†

  • 1Sandia National Laboratories, Livermore, California 94550, USA
  • 2Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
  • 3Institut für Experimentalphysik, Freie Universität Berlin, Arnimallee 14, 14195 Berlin, Germany
  • 4Sandia National Laboratories, Albuquerque, New Mexico 87106, USA

  • *Formerly Dr. Loginova
  • Corresponding author; mccarty@sandia.gov

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Vol. 80, Iss. 23 — 15 December 2009

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