Hydrogen-related defects and the role of metal additives in the kinetics of complex hydrides: A first-principles study

Khang Hoang and Chris G. Van de Walle
Phys. Rev. B 80, 214109 – Published 11 December 2009

Abstract

We report first-principles studies of hydrogen-related point defects and impurities in LiBH4 and Li4BN3H10, two promising materials for hydrogen storage. In both systems, hydrogen vacancies and interstitials are found to be positively or negatively charged, and hence their formation energies are Fermi-level dependent. One can therefore tailor the formation energies of these point defects (hence the kinetics of the systems) by shifting the Fermi level. This can be accomplished by adding appropriate impurities that are electrically active into the systems. We have identified a number of transition-metal impurities that are effective in shifting the Fermi level of LiBH4 and Li4BN3H10. A comparison of our calculations with experimental results for the effects of addition of impurities on the kinetics of LiBH4 and Li4BN3H10 shows qualitative agreement, providing validation for our interpretation of the results and for our proposed model for enhancement of kinetics.

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  • Received 30 July 2009

DOI:https://doi.org/10.1103/PhysRevB.80.214109

©2009 American Physical Society

Authors & Affiliations

Khang Hoang and Chris G. Van de Walle*

  • Materials Department, University of California, Santa Barbara, California 93106-5050, USA

  • *Corresponding author; vandewalle@mrl.ucsb.edu

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Issue

Vol. 80, Iss. 21 — 1 December 2009

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