Electrical detection and magnetic-field control of spin states in phosphorus-doped silicon

H. Morishita, L. S. Vlasenko, H. Tanaka, K. Semba, K. Sawano, Y. Shiraki, M. Eto, and K. M. Itoh
Phys. Rev. B 80, 205206 – Published 23 November 2009

Abstract

Electron paramagnetic resonance of ensembles of phosphorus donors in silicon has been detected electrically with externally applied magnetic fields lower than 200 G. Because the spin Hamiltonian was dominated by the contact hyperfine term rather than by the Zeeman terms at such low magnetic fields, superposition states α|+β| and β|+α| were formed between phosphorus electron and nuclear spins, and electron paramagnetic resonance transitions between these superposition states and | or | states are observed clearly. A continuous change of α and β with the magnetic field was observed with a behavior fully consistent with theory of phosphorus donors in silicon.

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  • Received 25 June 2009

DOI:https://doi.org/10.1103/PhysRevB.80.205206

©2009 American Physical Society

Authors & Affiliations

H. Morishita1, L. S. Vlasenko2, H. Tanaka3, K. Semba3, K. Sawano4, Y. Shiraki4, M. Eto1, and K. M. Itoh1,*

  • 1School of Fundamental Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522, Japan
  • 2A. F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
  • 3NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato, Wakamiya, Atsugi 243-0198, Japan
  • 4Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Setagaya-ku, Tokyo 158-0082, Japan

  • *kitoh@appi.keio.ac.jp

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Vol. 80, Iss. 20 — 15 November 2009

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