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Thermal effects in InP/(Ga,In)P quantum-dot single-photon emitters

A. K. Nowak, E. Gallardo, D. Sarkar, H. P. van der Meulen, J. M. Calleja, J. M. Ripalda, L. González, and Y. González
Phys. Rev. B 80, 161305(R) – Published 14 October 2009

Abstract

We present second-order photon correlation measurements on single InP/(Ga,In)P quantum dots as a function of temperature. Low background emission allows to obtain antibunching minima g(2)(0) below 0.25 up to 45 K. The antibunching time τR increases or decreases with temperature depending on the quantum-dot size. The two trends result from a competition between hole thermal excitation and dark-to-bright exciton transitions. The former prevails in smaller dots showing increasing τR with temperature, while the latter dominates in larger quantum dots showing decreasing τR with temperature.

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  • Received 14 July 2009

DOI:https://doi.org/10.1103/PhysRevB.80.161305

©2009 American Physical Society

Authors & Affiliations

A. K. Nowak1, E. Gallardo1, D. Sarkar1,2, H. P. van der Meulen1, J. M. Calleja1, J. M. Ripalda3, L. González3, and Y. González3

  • 1Departamento de Física de Materiales, Universidad Autónoma de Madrid, E-28049 Madrid, Spain
  • 2Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom
  • 3Instituto de Microelectrónica de Madrid, Centro Nacional de Microelectrónica, Consejo Superior de Investigaciones Científicas, Isaac Newton 8, PTM Tres Cantos, E-28760 Madrid, Spain

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Issue

Vol. 80, Iss. 16 — 15 October 2009

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