Theory of resistivity upturns in metallic cuprates

W. Chen, Brian M. Andersen, and P. J. Hirschfeld
Phys. Rev. B 80, 134518 – Published 23 October 2009

Abstract

We propose that the experimentally observed resistivity upturn of cuprates at low temperatures may be explained by properly accounting for the effects of disorder in a strongly correlated metallic host. Within a calculation of the dc conductivity using real-space diagonalization of a Hubbard model treated in an inhomogeneous unrestricted Hartree-Fock approximation, we find that correlations induce magnetic droplets around impurities, and give rise to additional magnetic scattering which causes the resistivity upturn. A pseudogap in the density of states is shown to enhance both the disorder-induced magnetic state and the resistivity upturns.

  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Received 10 May 2009

DOI:https://doi.org/10.1103/PhysRevB.80.134518

©2009 American Physical Society

Authors & Affiliations

W. Chen1, Brian M. Andersen2, and P. J. Hirschfeld1

  • 1Department of Physics, University of Florida, Gainesville, Florida 32611, USA
  • 2Nano-Science Center, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen, Denmark

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 80, Iss. 13 — 1 October 2009

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×