Anomalous corrections to the Hall resistivity of spin-polarized holes in a two-dimensional $\text{GaAs}/{\text{Al}}_x{\text{Ga}}_{1-x}\text{As}$ heterostructure

Hall effect of two-dimensional holes that are spin-polarized by a strong parallel magnetic field was explored with a small tilt angle. The Hall resistivity increases nonlinearly with the magnetic field and exhibits negative corrections. The anomalous negative corrections increase with the perpendicular magnetization of the two-dimensional hole system. We attribute this to the anomalous Hall effect of spin-polarized carriers in a nonmagnetic system. The anomalous corrections to the conductivity exhibit nonmonotonic dependence on the magnetic field.

Figure 1

(Color online) (a) ${\rho }_{xx}$ vs $B$ for $\theta =0.01°$, where $B$ is almost parallel to the 2D hole layer. There is a slight bump around 4.5 T, which is indicated by $B^{\ast }$. (b) ${\rho }_{xy}$ vs $B$ for different $\theta$. The 2D hole density is $p=2.8\times {10}^{10}{\text{cm}}^{-2}$

Figure 2

The Hall slope, $d{\rho }_{xy}/dB$, is plotted as a function of $B$ for different $\theta$.

Figure 3

(Color online) ${\rho }_{xy}$ vs $B$ for $\theta =0.22°$. Blue dashed line is a linear fit to the data for $B>4.5\text{T}$. Inset: ${\rho }_{xy}^A={\rho }_{xy}-{\rho }_{xy}^O$ vs $B$.

Figure 4

(Color online) ${\sigma }_{xy}^A={\sigma }_{xy}-{\sigma }_{xy}^O$ vs $B$ for different $\theta$. ${\sigma }_{xy}$ is obtained from ${\rho }_{xx}$ and ${\rho }_{xy}$, and ${\sigma }_{xy}^O$ is from ${\rho }_{xx}$ and ${\rho }_{xy}^O$.