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Orbital effects on tunneling anisotropic magnetoresistance in Fe/GaAs/Au junctions

M. Wimmer, M. Lobenhofer, J. Moser, A. Matos-Abiague, D. Schuh, W. Wegscheider, J. Fabian, K. Richter, and D. Weiss
Phys. Rev. B 80, 121301(R) – Published 1 September 2009

Abstract

We report experiments on epitaxially grown Fe/GaAs/Au tunnel junctions demonstrating that the magnitude of the tunneling anisotropic magnetoresistance (TAMR) effect can be controlled by magnetic field strength. Theoretical modeling shows that the interplay of the orbital effects of a magnetic field and the Dresselhaus spin-orbit coupling in the GaAs barrier leads to an independent contribution to the TAMR effect with uniaxial symmetry, whereas the Bychkov-Rashba spin-orbit coupling does not play a role. The effect is intrinsic to barriers with bulk inversion asymmetry.

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  • Received 29 June 2009

DOI:https://doi.org/10.1103/PhysRevB.80.121301

©2009 American Physical Society

Authors & Affiliations

M. Wimmer1, M. Lobenhofer2, J. Moser2, A. Matos-Abiague1, D. Schuh2, W. Wegscheider2, J. Fabian1, K. Richter1, and D. Weiss2

  • 1Institut für Theoretische Physik, Universität Regensburg, 93040 Regensburg, Germany
  • 2Institut für Experimentelle und Angewandte Physik, Universität Regensburg, 93040 Regensburg, Germany

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Issue

Vol. 80, Iss. 12 — 15 September 2009

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