Abstract
We present direct resistance measurements on under high pressure up to 2 GPa in the temperature range . We show that fresh, nominally pure exhibits a semiconductor-type conduction behavior at all experimental conditions, with a 1.2 eV band gap and a conduction strongly influenced by defect gap states. Contrary to and , both band gap and gap states have large pressure dependences. In contrast, a sample preserved in an oxygen-free environment for several months shows conduction by another mechanism, variable range 3D hopping. This is consistent with recent findings of nanoscale phase segregation in and can be understood in terms of conduction by intergrain hopping. Heating the sample at 2 GPa leads to a significant change in the resistivity, suggesting a structural transition. By characterizing the sample after the phase transformation with Raman spectroscopy and x-ray diffraction we identify a phase separation of the material into two main structures, linearly polymerized orthorhombic and two-dimensionally polymerized .
- Received 14 April 2009
DOI:https://doi.org/10.1103/PhysRevB.80.115405
©2009 American Physical Society