Relationships between strain and band structure in Si(001) and Si(110) nanomembranes

C. Euaruksakul, F. Chen, B. Tanto, C. S. Ritz, D. M. Paskiewicz, F. J. Himpsel, D. E. Savage, Zheng Liu, Yugui Yao, Feng Liu, and M. G. Lagally
Phys. Rev. B 80, 115323 – Published 24 September 2009

Abstract

The flexibility of single-crystal Si nanomembranes allows strain to be applied elastically without introducing dislocations in the fabrication process, resulting in uniform strain. It is also relatively easier to apply different types and orientations of strain to Si using elastic-strain sharing than by the traditional graded-strained-layer approach. We use X-ray absorption spectroscopy to measure the effect of uniform biaxial strain on several features of the conduction band structure of Si with (001) and (110) orientations. By also measuring the Si2p photoelectric threshold, we are able to determine the absolute positions of features of the Si conduction band and their change with strain.

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  • Received 9 April 2009

DOI:https://doi.org/10.1103/PhysRevB.80.115323

©2009 American Physical Society

Authors & Affiliations

C. Euaruksakul1, F. Chen1,2, B. Tanto1, C. S. Ritz1, D. M. Paskiewicz1, F. J. Himpsel1, D. E. Savage1, Zheng Liu3,4, Yugui Yao5, Feng Liu3, and M. G. Lagally1,*

  • 1University of Wisconsin–Madison, Madison, Wisconsin 53706, USA
  • 2Xi’an Jiaotong University, Xi’an, Shannxi 710049, China
  • 3University of Utah, Salt Lake City, Utah 84112, USA
  • 4Center for Advanced Study, Tsinghua University, Beijing 100084, China
  • 5Institute of Physics, CAS, Beijing 100190, China

  • *lagally@engr.wisc.edu

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Vol. 80, Iss. 11 — 15 September 2009

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