Effect of low nitrogen concentrations on the electronic properties of InAs1xNx

A. Patanè, W. H. M. Feu, O. Makarovsky, O. Drachenko, L. Eaves, A. Krier, Q. D. Zhuang, M. Helm, M. Goiran, and G. Hill
Phys. Rev. B 80, 115207 – Published 16 September 2009

Abstract

We report cyclotron resonance (CR), transverse magnetoresistance (MR), and Hall effect studies of a series of n-type InAs1xNx epilayers grown on GaAs with x up to 1%. The well-resolved CR absorption lines, the classical linear MR, Shubnikov–de Haas magneto-oscillations, and negative MR revealed in our experiments provide a means of probing the effect of the N atoms on the electronic properties of this alloy system and reveal qualitative differences compared to the case of the wider gap III-N-V compounds, such as GaAs1xNx. In GaAs1xNx electron localization by N levels that are resonant with the extended band states of the host crystal act to degrade the electrical conductivity at small x (0.1%). These phenomena are significantly weaker in InAs1xNx due to the smaller energy gap and higher energy of the N levels relative to the conduction band minimum. In InAs1xNx the electrical conductivity retains the characteristic features of transport through extended states, with electron coherence lengths (lφ100nm at 2 K) and electron mobilities (μ=6×103cm2V1s1 at 300 K) that remain relatively large even at x=1%.

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  • Received 5 June 2009

DOI:https://doi.org/10.1103/PhysRevB.80.115207

©2009 American Physical Society

Authors & Affiliations

A. Patanè1,*, W. H. M. Feu1, O. Makarovsky1, O. Drachenko2, L. Eaves1, A. Krier3, Q. D. Zhuang3, M. Helm2, M. Goiran4, and G. Hill5

  • 1School of Physics and Astronomy, The University of Nottingham, Nottingham NG7 2RD, United Kingdom
  • 2Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf, 01314 Dresden, Germany
  • 3Physics Department, Lancaster University, Lancaster LA1 4YB, United Kingdom
  • 4Laboratoire National des Champs Magnétiques Intenses, 143 Av. de Rangueil, 31432 Toulouse, France
  • 5Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S3 3JD, United Kingdom

  • *Corresponding author. amalia.patane@nottingham.ac.uk

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Vol. 80, Iss. 11 — 15 September 2009

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