Abstract
We report cyclotron resonance (CR), transverse magnetoresistance (MR), and Hall effect studies of a series of -type epilayers grown on GaAs with up to 1%. The well-resolved CR absorption lines, the classical linear MR, Shubnikov–de Haas magneto-oscillations, and negative MR revealed in our experiments provide a means of probing the effect of the N atoms on the electronic properties of this alloy system and reveal qualitative differences compared to the case of the wider gap III-N-V compounds, such as . In electron localization by N levels that are resonant with the extended band states of the host crystal act to degrade the electrical conductivity at small . These phenomena are significantly weaker in due to the smaller energy gap and higher energy of the N levels relative to the conduction band minimum. In the electrical conductivity retains the characteristic features of transport through extended states, with electron coherence lengths ( at 2 K) and electron mobilities ( at 300 K) that remain relatively large even at .
- Received 5 June 2009
DOI:https://doi.org/10.1103/PhysRevB.80.115207
©2009 American Physical Society