High-resolution absorption spectroscopy of the deep impurities S and Se in S28i revealing the S77e hyperfine splitting

M. Steger, A. Yang, M. L. W. Thewalt, M. Cardona, H. Riemann, N. V. Abrosimov, M. F. Churbanov, A. V. Gusev, A. D. Bulanov, I. D. Kovalev, A. K. Kaliteevskii, O. N. Godisov, P. Becker, H.-J. Pohl, E. E. Haller, and J. W. Ager, III
Phys. Rev. B 80, 115204 – Published 10 September 2009

Abstract

Recently, studies have demonstrated remarkable improvements in absorption spectroscopy of shallow impurities by using highly enriched S28i to eliminate the inhomogeneous isotope broadening inherent in natural Si. Here, we show that similar dramatic improvements in the linewidths of electronic transitions can be achieved with the two chalcogens sulfur and selenium in S28i. The S+ and Se+ 1s(T2) transitions exhibit a full width at half maximum of only 0.008cm1 for the Γ7 component—more than one order of magnitude sharper than in natural silicon and a factor of 1.5 narrower than the width of the sharpest shallow impurity transition in S28i. Hence they are the narrowest lines ever seen for impurity states in silicon. Fine structure is revealed in the absorption spectrum of the Se double donor and the S77e+ 1s(T2) Γ7 transition shows a splitting due to a hyperfine coupling with the I=1/2 nuclear spin. Under an applied magnetic field, the electronic, and nuclear spins can be individually determined with potential applications in quantum computing.

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  • Received 2 July 2009

DOI:https://doi.org/10.1103/PhysRevB.80.115204

©2009 American Physical Society

Authors & Affiliations

M. Steger, A. Yang, and M. L. W. Thewalt*

  • Department of Physics, Simon Fraser University, Burnaby, British Columbia, Canada V5A 1S6

M. Cardona

  • Max-Planck-Institut für Festkörperforschung, 70569 Stuttgart, Germany

H. Riemann and N. V. Abrosimov

  • Institute for Crystal Growth (IKZ), 12489 Berlin, Germany

M. F. Churbanov, A. V. Gusev, A. D. Bulanov, and I. D. Kovalev

  • IChHPS of the RAS, 603000 Nizhny Novgorod, Russia

A. K. Kaliteevskii and O. N. Godisov

  • Science and Technical Center “Centrotech,” 198096 St. Petersburg, Russia

P. Becker

  • Physikalisch-Technische Bundestanstalt Braunschweig, 38116 Braunschweig, Germany

H.-J. Pohl

  • VITCON Projectconsult GmbH, 07743 Jena, Germany

E. E. Haller and J. W. Ager, III

  • University of California Berkeley and LBNL, Berkeley, California 94720, USA

  • *thewalt@sfu.ca

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Vol. 80, Iss. 11 — 15 September 2009

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