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Stacking domains of epitaxial few-layer graphene on SiC(0001)

H. Hibino, S. Mizuno, H. Kageshima, M. Nagase, and H. Yamaguchi
Phys. Rev. B 80, 085406 – Published 6 August 2009
Physics logo See Synopsis: Sizing up domain walls in bilayer graphene

Abstract

We used low-energy electron microscopy (LEEM) and scanning tunneling microscopy (STM) to investigate domain structures of epitaxial few-layer graphene grown on SiC(0001). Dark-field (DF) LEEM images formed using (10) and (01) beams clearly indicate that bilayer graphene consists of two types of domains, which have threefold symmetry and are rotated by 180° with respect to each other. The DF LEEM images show clear domain contrasts at energies where (10)- and (01)-beam intensities calculated for bulk graphite are largely different. This means that the two types of domains are different in stacking: AB and AC stackings. The stacking domains are also supported by the STM images of bilayer graphene showing both hexagonal and honeycomb patterns.

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  • Received 10 April 2009

DOI:https://doi.org/10.1103/PhysRevB.80.085406

©2009 American Physical Society

Synopsis

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Sizing up domain walls in bilayer graphene

Published 10 August 2009

The mobility of charge carriers in epitaxial bilayer graphene may be limited by structural domains.

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Authors & Affiliations

H. Hibino1, S. Mizuno2, H. Kageshima1, M. Nagase1, and H. Yamaguchi1

  • 1NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan
  • 2Department of Molecular and Material Sciences, Kyushu University, Kasuga, Fukuoka 816-8580, Japan

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Issue

Vol. 80, Iss. 8 — 15 August 2009

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