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Bistable hysteresis and resistance switching in hydrogen-gold junctions

M. L. Trouwborst, E. H. Huisman, S. J. van der Molen, and B. J. van Wees
Phys. Rev. B 80, 081407(R) – Published 14 August 2009

Abstract

Current-voltage characteristics of H2-Au molecular junctions exhibit intriguing steps around a characteristic voltage of Vs40mV. Surprisingly, we find that a hysteresis is connected to these steps with a typical time scale >10ms. This time constant scales linearly with the power dissipated in the junction beyond an off-set power Ps=IVs. We propose that the hysteresis is related to vibrational heating of both the molecule in the junction and a set of surrounding hydrogen molecules. Remarkably, by stretching the junction the hysteresis’ characteristic time becomes >days. We demonstrate that reliable switchable devices can be built from such junctions.

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  • Received 8 June 2009

DOI:https://doi.org/10.1103/PhysRevB.80.081407

©2009 American Physical Society

Authors & Affiliations

M. L. Trouwborst1,*, E. H. Huisman1, S. J. van der Molen2, and B. J. van Wees1

  • 1Physics of Nanodevices, Zernike Institute for Advanced Materials, Rijksuniversiteit Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands
  • 2Kamerlingh Onnes Laboratorium, Leiden University, P.O. Box 9504, 2300 RA Leiden, The Netherlands

  • *Present address: IBM Research-Zürich; mtr@zurich.ibm.com

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Vol. 80, Iss. 8 — 15 August 2009

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