Abstract
The initial growth of MnBi on MnAs-terminated (GaMn)As is studied by means of synchrotron-based photoelectron spectroscopy. From analysis of surface core-level shifts we conclude that a continued epitaxial MnBi layer is formed, in which the MnAs/MnBi interface occurs between As and Bi atomic planes. The well-defined surface reconstruction of the MnAs surface is preserved for up to 2 ML of MnBi before clear surface degradation occurs. The MnBi layer appears to be free from intermixed As.
- Received 5 March 2009
DOI:https://doi.org/10.1103/PhysRevB.80.075204
©2009 American Physical Society