Formation of epitaxial MnBi layers on (Ga,Mn)As

J. Adell, M. Adell, I. Ulfat, L. Ilver, J. Sadowski, and J. Kanski
Phys. Rev. B 80, 075204 – Published 10 August 2009

Abstract

The initial growth of MnBi on MnAs-terminated (GaMn)As is studied by means of synchrotron-based photoelectron spectroscopy. From analysis of surface core-level shifts we conclude that a continued epitaxial MnBi layer is formed, in which the MnAs/MnBi interface occurs between As and Bi atomic planes. The well-defined 1×2 surface reconstruction of the MnAs surface is preserved for up to 2 ML of MnBi before clear surface degradation occurs. The MnBi layer appears to be free from intermixed As.

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  • Received 5 March 2009

DOI:https://doi.org/10.1103/PhysRevB.80.075204

©2009 American Physical Society

Authors & Affiliations

J. Adell1, M. Adell1, I. Ulfat1, L. Ilver1, J. Sadowski2,3, and J. Kanski1

  • 1Department of Applied Physics, Chalmers University of Technology, SE-412 96 Göteborg, Sweden
  • 2MAX-lab, Lund University, SE-221 00 Lund, Sweden
  • 3Institute of Physics, Polish Academy of Sciences, aleja Lotnikow 32/46, 02-668 Warszawa, Poland

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Issue

Vol. 80, Iss. 7 — 15 August 2009

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