Tight-binding approach to uniaxial strain in graphene

Vitor M. Pereira, A. H. Castro Neto, and N. M. R. Peres
Phys. Rev. B 80, 045401 – Published 1 July 2009

Abstract

We analyze the effect of tensional strain in the electronic structure of graphene. In the absence of electron-electron interactions, within linear elasticity theory, and a tight-binding approach, we observe that strain can generate a bulk spectral gap. However, this gap is critical, requiring threshold deformations in excess of 20% and only along preferred directions with respect to the underlying lattice. The gapless Dirac spectrum is robust for small and moderate deformations and the gap appears as a consequence of the merging of the two inequivalent Dirac points only under considerable deformations of the lattice. We discuss how strain-induced anisotropy and local deformations can be used as a means to affect transport characteristics and pinch off current flow in graphene devices.

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  • Received 1 December 2008

DOI:https://doi.org/10.1103/PhysRevB.80.045401

©2009 American Physical Society

Authors & Affiliations

Vitor M. Pereira and A. H. Castro Neto

  • Department of Physics, Boston University, 590 Commonwealth Avenue, Boston, Massachusetts 02215, USA

N. M. R. Peres

  • Departamento de Física e Centro de Física, Universidade do Minho, P-4710-057 Braga, Portugal

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Issue

Vol. 80, Iss. 4 — 15 July 2009

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