Asymmetry between the electron- and hole-doped Mott transition in the periodic Anderson model

G. Sordi, A. Amaricci, and M. J. Rozenberg
Phys. Rev. B 80, 035129 – Published 27 July 2009

Abstract

We study the doping-driven Mott metal-insulator transition (MIT) in the periodic Anderson model set in the Mott-Hubbard regime. A striking asymmetry for electron- or hole-driven transitions is found. The electron-doped MIT at larger U is similar to the one found in the single band Hubbard model, with a first-order character due to coexistence of solutions. The hole-doped MIT, in contrast, is second order and can be described as the delocalization of Zhang-Rice singlets.

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  • Received 13 February 2009

DOI:https://doi.org/10.1103/PhysRevB.80.035129

©2009 American Physical Society

Authors & Affiliations

G. Sordi1, A. Amaricci1, and M. J. Rozenberg1,2

  • 1Laboratoire de Physique des Solides, CNRS-UMR8502, Université de Paris-Sud, Orsay 91405, France
  • 2Departamento de Física, FCEN, Universidad de Buenos Aires, Ciudad Universitaria Pab. I, Buenos Aires 1428, Argentina

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Vol. 80, Iss. 3 — 15 July 2009

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