Abstract
Strain relaxation studies in epitaxial magnetite, , thin films grown on (100) substrates are reported. The study shows that the films were relaxed in line with the theoretical model prediction with a critical thickness, . Antiphase boundaries (APBs) are not expected to form in films grown on substrates because both film and substrate have the same crystal symmetry. In contrast, our study reveals the formation of APBs within the films. Our analysis shows that the APBs in a heteroepitaxial system are formed by partial dislocations, which accommodate the misfit. This formation mechanism of APBs is fundamentally different from the one found in the system, where APBs are formed as a consequence of equivalent nucleation sites on the MgO substrate separated by nontranslational vectors of the lattice. The mechanism for the formation of antiphase boundaries through partial dislocations should be applicable to a wide range of epitaxial systems having identical symmetries of the film and the substrate and significant lattice mismatch.
- Received 23 April 2009
DOI:https://doi.org/10.1103/PhysRevB.80.024111
©2009 American Physical Society