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Experimentally constrained density-functional calculations of the amorphous structure of the prototypical phase-change material Ge2Sb2Te5

J. Akola, R. O. Jones, S. Kohara, S. Kimura, K. Kobayashi, M. Takata, T. Matsunaga, R. Kojima, and N. Yamada
Phys. Rev. B 80, 020201(R) – Published 7 July 2009
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Abstract

Phase change materials involve the rapid and reversible transition between nanoscale amorphous (a) and crystalline (c) spots in a polycrystalline film and play major roles in the multimedia world, including nonvolatile computer memory. The materials of choice are alloys of Ge, Sb, and Te, e.g., Ge2Sb2Te5 (GST) in digital versatile disk–random access memory. There has been much speculation about the structure of a GST, but no model has yet received general acceptance. Here we optimize the structure by combining the results of density-functional calculations with high-energy x-ray diffraction data and x-ray photoelectron spectroscopy (XPS) measurements of the electronic densities of states to determine the structure. The structure agrees very well with available experimental data, including the differences in the XPS data between the amorphous and crystalline structures.

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  • Received 24 April 2009
  • Corrected 15 July 2009

DOI:https://doi.org/10.1103/PhysRevB.80.020201

©2009 American Physical Society

Corrections

15 July 2009

Erratum

Publisher's Note: Experimentally constrained density-functional calculations of the amorphous structure of the prototypical phase-change material Ge2Sb2Te5 [Phys. Rev. B 80, 020201(R) (2009)]

J. Akola, R. O. Jones, S. Kohara, S. Kimura, K. Kobayashi, M. Takata, T. Matsunaga, R. Kojima, and N. Yamada
Phys. Rev. B 80, 029902 (2009)

Authors & Affiliations

J. Akola1,2, R. O. Jones1, S. Kohara3,4, S. Kimura3,4, K. Kobayashi5, M. Takata4,6, T. Matsunaga4,7, R. Kojima7, and N. Yamada4,7

  • 1Institut für Festkörperforschung, Forschungszentrum Jülich, D-52425 Jülich, Germany
  • 2Nanoscience Center, Department of Physics, University of Jyväskylä, P.O. Box 35, FI-40014 Jyväskylä, Finland
  • 3JASRI/SPring-8, 1-1-1 Kouto, Sayo-gun, Hyogo 679-5198, Japan
  • 4JST, CREST, 5 Sanbancho, Chiyoda-ku, Tokyo 102-0075, Japan
  • 5Beamline Station at SPring-8, National Institute for Materials Science, 1-1-1 Kouto, Sayo-gun, Hyogo 679-5198, Japan
  • 6SPring-8/RIKEN, 1-1-1 Kouto, Sayo-gun, Hyogo 679-5148, Japan
  • 7Panasonic Corporation, 3-1-1 Yagumo-Nagamachi, Moriguchi, Osaka 570-8501, Japan

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Issue

Vol. 80, Iss. 2 — 1 July 2009

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