Modification of the Absorption Edge of GaAs Arising from Hot-Electron Effects

J. C. McGroddy and Ove Christensen
Phys. Rev. B 8, 5592 – Published 15 December 1973
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Abstract

We have observed a large enhancement of the electric-field-induced optical absorption arising from hot-electron effects in n-type GaAs at 77 K. The magnitude and field dependence of the enhancement can be approximately accounted for by a theory attributing the effect to broadening of the final states of the optical transitions by interaction with the nonequilibrium optical phonons produced by the hot electrons.

  • Received 25 April 1973

DOI:https://doi.org/10.1103/PhysRevB.8.5592

©1973 American Physical Society

Authors & Affiliations

J. C. McGroddy and Ove Christensen

  • IBM T. J. Watson Research Center, Yorktown Heights, New York 10598
  • Technical University of Denmark, Lyngby, Denmark

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Vol. 8, Iss. 12 — 15 December 1973

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