Influence of Quadrupole and Octupole Electron-Phonon Coupling on the Low-Field Transport Properties of n-type Silicon

N. O. Gram and M. H. Jørgensen
Phys. Rev. B 8, 3902 – Published 15 October 1973
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Abstract

Comparison of low-field mobility and piezoresistance data with calculations gives support to the importance of quadrupole and octupole electron-phonon interactions in n-type silicon.

  • Received 5 April 1973

DOI:https://doi.org/10.1103/PhysRevB.8.3902

©1973 American Physical Society

Authors & Affiliations

N. O. Gram and M. H. Jørgensen

  • Physics Laboratory III, Technical University of Denmark, Lyngby, Denmark

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Issue

Vol. 8, Iss. 8 — 15 October 1973

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