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Influence of anisotropic strain on the dielectric and ferroelectric properties of SrTiO3 thin films on DyScO3 substrates

M. D. Biegalski, E. Vlahos, G. Sheng, Y. L. Li, M. Bernhagen, P. Reiche, R. Uecker, S. K. Streiffer, L. Q. Chen, V. Gopalan, D. G. Schlom, and S. Trolier-McKinstry
Phys. Rev. B 79, 224117 – Published 26 June 2009

Abstract

The in-plane dielectric and ferroelectric properties of coherent anisotropically strained SrTiO3 thin films grown on orthorhombic (101) DyScO3 substrates were examined as a function of the angle between the applied electric field and the principal directions of the substrate. The dielectric permittivity revealed two distinct maxima as a function of temperature along the [100]p and [010]p SrTiO3 pseudocubic directions. These data, in conjunction with optical second-harmonic generation, show that the switchable ferroelectric polarization develops first predominantly along the in-plane axis with the larger tensile strain before developing a polarization component along the perpendicular direction with smaller strain as well, leading to domain twinning at the lower temperature. Finally, weak signatures in the dielectric and second-harmonic generation response were detected at the SrTiO3 tilt transition close to 165 K. These studies indicate that anisotropic biaxial strain can lead to new ferroelectric domain reorientation transitions that are not observed in isotropically strained films.

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  • Received 18 March 2009

DOI:https://doi.org/10.1103/PhysRevB.79.224117

©2009 American Physical Society

Authors & Affiliations

M. D. Biegalski1,2, E. Vlahos2, G. Sheng2, Y. L. Li2, M. Bernhagen3, P. Reiche3, R. Uecker3, S. K. Streiffer4, L. Q. Chen2, V. Gopalan2, D. G. Schlom5, and S. Trolier-McKinstry2

  • 1Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830, USA
  • 2Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802, USA
  • 3Institute for Crystal Growth, D-12489 Berlin, Germany
  • 4Center for Nanoscale Materials, Argonne National Laboratory, Argonne, Illinois 60439, USA
  • 5Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA

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Issue

Vol. 79, Iss. 22 — 1 June 2009

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