Direct mapping of the lateral force gradient on Si(111)7×7

Shigeki Kawai, Naruo Sasaki, and Hideki Kawakatsu
Phys. Rev. B 79, 195412 – Published 13 May 2009

Abstract

Lateral force gradient of down to 0.01 N/m on Si(111)7×7 was directly detected by dynamic lateral-force microscopy with an amplitude of 81 pm. Positive and negative torsional resonance frequency shifts of a silicon cantilever caused by the attractive interaction inward and outward tip ditherings were detected on adatom and nonadatom sites, respectively. The lateral force of down to subpiconewton was measurable with direct lateral-force spectroscopy. The converted lateral force predicts a possibility of the stick-slip motion in the noncontact region. The theoretical calculations were in good qualitative agreement with the experiments.

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  • Received 9 December 2008

DOI:https://doi.org/10.1103/PhysRevB.79.195412

©2009 American Physical Society

Authors & Affiliations

Shigeki Kawai1,2,*, Naruo Sasaki3, and Hideki Kawakatsu1

  • 1Institute of Industrial Science, The University of Tokyo, Komaba 4-6-1, Meguro-ku, Tokyo 153-8505, Japan and CREST, Japan Science and Technology Agency, Hon-machi 4-1-8, Kawaguchi, Saitama 332-0012, Japan
  • 2Department of Physics, University of Basel, Klingelbergstr. 82, 4056 Basel, Switzerland
  • 3Department of Materials and Life Science, Faculty of Science and Technology, Seikei University, Kitamachi 3-3-1, Kichijoji, Musashino-shi, Tokyo 180-8633, Japan

  • *shigeki.kawai@unibas.ch

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Issue

Vol. 79, Iss. 19 — 15 May 2009

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