Current-induced spin torques in III-V ferromagnetic semiconductors

Dimitrie Culcer, M. E. Lucassen, R. A. Duine, and R. Winkler
Phys. Rev. B 79, 155208 – Published 23 April 2009

Abstract

We formulate a theory of current-induced spin torques in inhomogeneous III-V ferromagnetic semiconductors. The carrier spin 3/2 and large spin-orbit interaction, leading to spin nonconservation, introduce significant conceptual differences from spin torques in ferromagnetic metals. We determine the spin density in an electric field in the weak momentum scattering regime, demonstrating that the torque on the magnetization is intimately related to spin precession under the action of both the spin-orbit interaction and the exchange field characteristic of ferromagnetism. The spin polarization excited by the electric field is smaller than in ferromagnetic metals and, due to lack of angular-momentum conservation, cannot be expressed in a simple closed vectorial form. Remarkably, scalar and spin-dependent scatterings do not affect the result. We use our results to estimate the velocity of current-driven domain walls.

  • Figure
  • Received 25 February 2008

DOI:https://doi.org/10.1103/PhysRevB.79.155208

©2009 American Physical Society

Authors & Affiliations

Dimitrie Culcer1,2, M. E. Lucassen3, R. A. Duine3, and R. Winkler1,2

  • 1Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, USA
  • 2Northern Illinois University, De Kalb, Illinois 60115, USA
  • 3Institute for Theoretical Physics, Utrecht University, Leuvenlaan 4, 3584 CE Utrecht, The Netherlands

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Issue

Vol. 79, Iss. 15 — 15 April 2009

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