Influence of band structure on the large thermoelectric performance of lanthanum telluride

Andrew F. May, David J. Singh, and G. Jeffrey Snyder
Phys. Rev. B 79, 153101 – Published 1 April 2009

Abstract

We investigate the carrier density and temperature dependence of the Seebeck coefficient of La3xTe4 via density-functional calculations and Boltzmann transport theory. The pertinent band structure has light bands at the band gap and heavy degenerate bands with band minima near energies corresponding to the experimentally determined optimum carrier density. Heavy bands increase the energy dependence of the density of states, which increases the magnitude of the Seebeck coefficient in an itinerant conduction regime, while the light bands provide a conduction channel that works against carrier localization promoted by La vacancies. The net result is thermoelectric performance greater than current n-type materials above 1000 K.

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  • Received 5 February 2009

DOI:https://doi.org/10.1103/PhysRevB.79.153101

©2009 American Physical Society

Authors & Affiliations

Andrew F. May1, David J. Singh2, and G. Jeffrey Snyder3

  • 1Department of Chemical Engineering, California Institute of Technology, Pasadena, California 91125, USA
  • 2Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6114, USA
  • 3Department of Materials Science, California Institute of Technology, Pasadena, California 91125, USA

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Issue

Vol. 79, Iss. 15 — 15 April 2009

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