Doping dependence of the upper critical field and Hall resistivity of LaFeAsO1xFx (x=0, 0.025, 0.05, 0.07, 0.11, and 0.14)

Y. Kohama, Y. Kamihara, S. A. Baily, L. Civale, S. C. Riggs, F. F. Balakirev, T. Atake, M. Jaime, M. Hirano, and H. Hosono
Phys. Rev. B 79, 144527 – Published 30 April 2009

Abstract

The electrical resistivity (ρxx) and Hall resistivity (ρxy) of LaFeAsO1xFx have been measured over a wide fluorine-doping range 0x0.14 using 60 T pulsed magnets. While the superconducting phase diagram (Tc,x) displays the classic dome-shaped structure, we find that the resistive upper critical field (Hc2) increases monotonically with decreasing fluorine concentration, with the largest Hc275T for x=0.05. This is reminiscent of the composition dependence in high-Tc cuprates and might correlate with opening of a pseudogap in the underdoped region. Furthermore, the temperature dependence of Hc2(T) for superconducting samples can be understood in terms of multiband superconductivity. ρxy data for nonsuperconducting samples show nonlinear field dependence, which is also consistent with a multicarrier scenario.

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  • Received 18 August 2008

DOI:https://doi.org/10.1103/PhysRevB.79.144527

©2009 American Physical Society

Authors & Affiliations

Y. Kohama1,2, Y. Kamihara3,4, S. A. Baily1,5, L. Civale5, S. C. Riggs6, F. F. Balakirev1, T. Atake2, M. Jaime1, M. Hirano3,4, and H. Hosono3,4

  • 1MPA-NHMFL, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA
  • 2Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan
  • 3ERATO-SORST, Japan Science and Technology Agency in Frontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan
  • 4Frontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan
  • 5Superconductivity Technology Center, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA
  • 6NHMFL, Florida State University, Tallahassee, Florida 32310, USA

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Issue

Vol. 79, Iss. 14 — 1 April 2009

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