Ideal barriers to polarization reversal and domain-wall motion in strained ferroelectric thin films

S. P. Beckman, Xinjie Wang, Karin M. Rabe, and David Vanderbilt
Phys. Rev. B 79, 144124 – Published 30 April 2009

Abstract

The ideal intrinsic barriers to domain switching in c-phase PbTiO3 (PTO), PbZrO3 (PZO), and PbZr1xTixO3 (PZT) are investigated via first-principles computational methods. The effects of epitaxial strain on the atomic structure, ferroelectric response, barrier to coherent domain reversal, domain-wall energy, and barrier to domain-wall translation are studied. It is found that PTO has a larger polarization, but smaller energy barrier to domain reversal, than PZO. Consequentially the idealized coercive field is over two times smaller in PTO than PZO. The Ti-O bond length is more sensitive to strain than the other bonds in the crystals. This results in the polarization and domain-wall energy in PTO having greater sensitivity to strain than in PZO. Two ordered phases of PZT are considered, the rocksalt structure and a (100) PTO/PZO superlattice. In these simple structures we find that the ferroelectric properties do not obey Vergard’s law, but instead can be approximated as an average over individual five-atom unit cells.

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  • Received 2 December 2008

DOI:https://doi.org/10.1103/PhysRevB.79.144124

©2009 American Physical Society

Authors & Affiliations

S. P. Beckman*, Xinjie Wang, Karin M. Rabe, and David Vanderbilt

  • Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854-8019, USA

  • *Present address: Department of Materials Science and Engineering, Iowa State University, Ames, IA 50011-2300; sbeckman@iastate.edu

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Vol. 79, Iss. 14 — 1 April 2009

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