Abstract
Ab initio techniques are used to elucidate the lateral noncontact AFM pair exchange of Sn and Ge adatoms on the surface both at low and room temperatures. Two different processes are considered: (a) tip-assisted surface diffusion and (b) active tip participation via adatom pick-up/deposition processes. The adatom diffusion profiles indicate fairly modest energy barriers between 0.6 and 0.8 eV, which can be further significantly reduced by the tip. However, the diffusion-mediated exchange mechanism is precluded by a large barrier to the (Sn, Ge)-pair exchange. The experimental data are only consistent with a mechanism involving a simultaneous adatom pick-up/deposition and adatom diffusion processes. Simulation results show that, contrary to general belief, the tip apex modification due to the pick-up/deposition processes may not be experimentally noticeable.
- Received 23 January 2009
DOI:https://doi.org/10.1103/PhysRevB.79.125431
©2009 American Physical Society