Nanoengineering with dynamic atomic force microscopy: Lateral interchange of adatoms on a Ge(111)c(2×8) surface

Peter Dieška and Ivan Štich
Phys. Rev. B 79, 125431 – Published 25 March 2009

Abstract

Ab initio techniques are used to elucidate the lateral noncontact AFM pair exchange of Sn and Ge adatoms on the Ge(111)c(2×8) surface both at low and room temperatures. Two different processes are considered: (a) tip-assisted surface diffusion and (b) active tip participation via adatom pick-up/deposition processes. The adatom diffusion profiles indicate fairly modest energy barriers between 0.6 and 0.8 eV, which can be further significantly reduced by the tip. However, the diffusion-mediated exchange mechanism is precluded by a large barrier (>1eV) to the (Sn, Ge)-pair exchange. The experimental data are only consistent with a mechanism involving a simultaneous adatom pick-up/deposition and adatom diffusion processes. Simulation results show that, contrary to general belief, the tip apex modification due to the pick-up/deposition processes may not be experimentally noticeable.

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  • Received 23 January 2009

DOI:https://doi.org/10.1103/PhysRevB.79.125431

©2009 American Physical Society

Authors & Affiliations

Peter Dieška1 and Ivan Štich2,*

  • 1Center for Computational Materials Science (CCMS), Slovak University of Technology (FEI STU), Ilkovičova 3, SK-81219 Bratislava, Slovakia
  • 2Institute of Physics, Slovak Academy of Sciences, SK-84511 Bratislava, Slovakia

  • *Author to whom correspondence should be addressed; ivan.stich@savba.sk

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Vol. 79, Iss. 12 — 15 March 2009

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