Voltage-controlled nuclear polarization switching in a single InxGa1xAs quantum dot

M. N. Makhonin, J. Skiba-Szymanska, M. S. Skolnick, H.-Y. Liu, M. Hopkinson, and A. I. Tartakovskii
Phys. Rev. B 79, 125318 – Published 19 March 2009

Abstract

Sharp thresholdlike transitions between two stable nuclear-spin polarizations are observed in optically pumped individual InxGa1xAs self-assembled quantum dots embedded in a Schottky diode when the bias applied to the diode is tuned. The abrupt transitions lead to the switching of the Overhauser field in the dot by up to 3 T. The bias-dependent photoluminescence measurements reveal the importance of the electron-tunneling-assisted nuclear-spin pumping. We also find evidence for the resonant LO-phonon-mediated electron cotunneling, the effect controlled by the applied bias and leading to the reduction of the nuclear-spin pumping rate.

  • Figure
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  • Received 9 January 2009

DOI:https://doi.org/10.1103/PhysRevB.79.125318

©2009 American Physical Society

Authors & Affiliations

M. N. Makhonin1, J. Skiba-Szymanska1, M. S. Skolnick1, H.-Y. Liu2, M. Hopkinson2, and A. I. Tartakovskii1

  • 1Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom
  • 2Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, United Kingdom

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Issue

Vol. 79, Iss. 12 — 15 March 2009

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