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Optical anisotropy in [0001]-oriented AlxGa1xN/AlN quantum wells (x>0.69)

R. G. Banal, M. Funato, and Y. Kawakami
Phys. Rev. B 79, 121308(R) – Published 30 March 2009

Abstract

The optical polarization in [0001]-oriented AlxGa1xN/AlN multiple quantum wells (QWs) in the deep-ultraviolet region (x>0.69) was studied. Photoluminescence spectroscopy performed at 8.5 K revealed that the predominant polarization direction in QWs with a well width of 1.5nm switched from GaN-like E[0001] to AlN-like E[0001] at an Al composition x of 0.83, where E is the electric field vector of emitted light. This Al composition is much higher than the previously reported critical compositions for polarization switching phenomena. Furthermore, decreasing the well width from more than 10 to 1.5 nm promoted E[0001] polarization. These results can be explained by the effect of strain and quantum confinement on the valence-band structures.

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  • Received 15 December 2008

DOI:https://doi.org/10.1103/PhysRevB.79.121308

©2009 American Physical Society

Authors & Affiliations

R. G. Banal, M. Funato*, and Y. Kawakami

  • Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan

  • *funato@kuee.kyoto-u.ac.jp
  • kawakami@kuee.kyoto-u.ac.jp

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Issue

Vol. 79, Iss. 12 — 15 March 2009

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