Infrared spectroscopy of electronic bands in bilayer graphene

A. B. Kuzmenko, E. van Heumen, D. van der Marel, P. Lerch, P. Blake, K. S. Novoselov, and A. K. Geim
Phys. Rev. B 79, 115441 – Published 30 March 2009

Abstract

We present infrared spectra (0.1–1 eV) of electrostatically gated bilayer graphene as a function of doping and compare it with tight-binding calculations. All major spectral features corresponding to the expected interband transitions are identified in the spectra: a strong peak due to transitions between parallel split-off bands and two onset-like features due to transitions between valence and conduction bands. A strong gate voltage dependence of these structures and a significant electron-hole asymmetry are observed that we use to extract several band parameters. The structures related to the gate-induced band gap are less pronounced in the experiment than predicted by the tight-binding model that uses parameters obtained from previous experiments on graphite and recent self-consistent band-gap calculations.

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  • Received 14 October 2008

DOI:https://doi.org/10.1103/PhysRevB.79.115441

©2009 American Physical Society

Authors & Affiliations

A. B. Kuzmenko, E. van Heumen, and D. van der Marel

  • Départment de Physique de la Matière Condensée, Université de Genève, CH-1211 Genève 4, Switzerland

P. Lerch

  • Paul Scherrer Institute, Villigen 5232, Switzerland

P. Blake, K. S. Novoselov, and A. K. Geim

  • Manchester Centre for Mesoscience and Nanotechnology, University of Manchester, Manchester M13 9PL, United Kingdom

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Issue

Vol. 79, Iss. 11 — 15 March 2009

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