High-resolution, hard x-ray photoemission investigation of BaFe2As2: Moderate influence of the surface and evidence for a low degree of Fe3dAs4p hybridization of electronic states near the Fermi energy

S. de Jong, Y. Huang, R. Huisman, F. Massee, S. Thirupathaiah, M. Gorgoi, F. Schaefers, R. Follath, J. B. Goedkoop, and M. S. Golden
Phys. Rev. B 79, 115125 – Published 24 March 2009

Abstract

Photoemission data taken with hard x-ray radiation on cleaved single crystals of the barium parent compound of the MFe2As2 pnictide high-temperature superconductor family are presented. Making use of the increased bulk sensitivity upon hard x-ray excitation, and comparing the results to data taken at conventional vacuum ultraviolet photoemission excitation energies, it is shown that the BaFe2As2 cleavage surface provides an electrostatic environment that is slightly different to the bulk, most likely in the form of a modified Madelung potential. However, as the data argue against a different surface doping level, and the surface-related features in the spectra are by no means as dominating as seen in systems such as YBa2Cu3Ox, we can conclude that the itinerant, near-EF electronic states are almost unaffected by the existence of the cleavage surface. Furthermore, exploiting the strong changes in photoionization cross section between the Fe and As states across the wide photon energy range employed, it is shown that the degree of energetic overlap between the iron 3d and arsenic 4p valence bands is particularly small at the Fermi level, which can only mean a very low degree of hybridization between the Fe3d and As4p states near and at EF. Consequently, this means that the itinerancy of the charge carriers in this group of materials involves mainly the Fe3d-Fe3d overlap integrals with at best a minor role for the Fe3d-As4p hopping parameters and that the states which support superconductivity upon doping are essentially of Fe3d character.

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  • Received 19 January 2009

DOI:https://doi.org/10.1103/PhysRevB.79.115125

©2009 American Physical Society

Authors & Affiliations

S. de Jong1,*, Y. Huang1, R. Huisman1, F. Massee1, S. Thirupathaiah2, M. Gorgoi2, F. Schaefers2, R. Follath2, J. B. Goedkoop1, and M. S. Golden1

  • 1Van der Waals-Zeeman Institute, University of Amsterdam, NL-1018XE Amsterdam, The Netherlands
  • 2Helmholz Zentrum Berlin, Albert-Einstein-Strasse 15, 12489 Berlin, Germany

  • *sdejong@science.uva.nl

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Vol. 79, Iss. 11 — 15 March 2009

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