Angle-resolved photoemission study of Nb-doped SrTiO3

M. Takizawa, K. Maekawa, H. Wadati, T. Yoshida, A. Fujimori, H. Kumigashira, and M. Oshima
Phys. Rev. B 79, 113103 – Published 18 March 2009

Abstract

We have performed an angle-resolved photoemission spectroscopy (ARPES) study of the O2p valence-band structure of Nb-doped SrTiO3, in which a dilute concentration of electrons are doped into the d0 band insulator. We have found that ARPES spectra at the valence-band maxima at the M [k=(πa,πa,0)] and R [k=(πa,πa,πa)] points start from 3.3eV below the Fermi level (EF), consistent with the indirect band gap of 3.3 eV and the EF position at the bottom of the conduction band. The peak position of the ARPES spectra were, however, shifted toward higher binding energies by 500meV from the 3.3 eV threshold. Because the bands at the M and R points have pure O2p character, we attribute this 500meV shift to strong coupling of the oxygen p hole with optical phonons, in analogy with the peak shifts observed for d-electron photoemission spectra in various transition-metal oxides.

  • Figure
  • Figure
  • Figure
  • Received 15 December 2008

DOI:https://doi.org/10.1103/PhysRevB.79.113103

©2009 American Physical Society

Authors & Affiliations

M. Takizawa, K. Maekawa, H. Wadati, T. Yoshida, and A. Fujimori

  • Department of Physics, University of Tokyo, Bunkyo-ku, Tokyo 113-0033, Japan

H. Kumigashira and M. Oshima

  • Department of Applied Chemistry, University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 79, Iss. 11 — 15 March 2009

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×