Magnetoresistance tensor of La0.8Sr0.2MnO3

Y. Bason, J. Hoffman, C. H. Ahn, and L. Klein
Phys. Rev. B 79, 092406 – Published 13 March 2009

Abstract

We measure the temperature dependence of the anisotropic magnetoresistance (AMR) and the planar Hall effect (PHE) in c-axis-oriented epitaxial thin films of La0.8Sr0.2MnO3 for different current directions relative to the crystal axes, and show that both AMR and PHE depend strongly on current orientation. We determine a magnetoresistance tensor, extracted to fourth order, which reflects the crystal symmetry and provides a comprehensive description of the data. We extend the applicability of the extracted tensor by determining the biaxial magnetocrystalline anisotropy in our samples.

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  • Received 2 December 2008

DOI:https://doi.org/10.1103/PhysRevB.79.092406

©2009 American Physical Society

Authors & Affiliations

Y. Bason1,*, J. Hoffman2, C. H. Ahn2, and L. Klein1

  • 1Department of Physics, Nano-magnetism Research Center, Institute of Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat-Gan 52900, Israel
  • 2Department of Applied Physics, Yale University, New Haven, Connecticut 06520-8284, USA

  • *basony@mail.biu.ac.il

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Issue

Vol. 79, Iss. 9 — 1 March 2009

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