Q-dependent electronic excitations in osmium: Pressure- and temperature-induced effects

Yu. S Ponosov, V. V. Struzhkin, A. F. Goncharov, and S. V. Streltsov
Phys. Rev. B 78, 245106 – Published 5 December 2008; Erratum Phys. Rev. B 81, 249901 (2010)

Abstract

Raman scattering by electrons and phonons has been studied in single crystals of the 5d transition-metal osmium under pressures up to 60 GPa in the temperature range of 10–300 K. An anomalous increase in the electronic light-scattering cross section was found in the pressure range of 20–30 GPa with the use of green and blue excitation wavelengths. At these conditions, we observe an appearance of well-defined electronic peaks at 580cm1 for the wave-vector direction q[0001] and at 350cm1 for q[101¯0]. The comparison of q dependencies measured and calculated from the first-principles spectra suggests a strong volume- and temperature-dependent renormalization of the energies and damping of the electronic states near the Fermi level.

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  • Received 15 July 2008

DOI:https://doi.org/10.1103/PhysRevB.78.245106

©2008 American Physical Society

Erratum

Erratum: Q-dependent electronic excitations in osmium: Pressure- and temperature-induced effects [Phys. Rev. B 78, 245106 (2008)]

Yu. S Ponosov, V. V. Struzhkin, A. F. Goncharov, and S. V. Streltsov
Phys. Rev. B 81, 249901 (2010)

Authors & Affiliations

Yu. S Ponosov*

  • Institute of Metal Physics, UD, RAS, 620041, S. Kovalevskaya str. 18, Ekaterinburg, Russia

V. V. Struzhkin and A. F. Goncharov

  • Geophysical Laboratory, Carnegie Institution of Washington, 5251 Broad Branch Road NW, Washington, DC 20015, USA

S. V. Streltsov

  • Institute of Metal Physics, UD, RAS, 620041, S. Kovalevskaya str. 18, Ekaterinburg, Russia and Ural State Technical University, Mira St. 19, 620002 Ekaterinburg, Russia

  • *ponosov@imp.uran.ru

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Issue

Vol. 78, Iss. 24 — 15 December 2008

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