Local structure of Mn in hydrogenated Ga1xMnxAs

C. Bihler, G. Ciatto, H. Huebl, G. Martinez-Criado, P. J. Klar, K. Volz, W. Stolz, W. Schoch, W. Limmer, F. Filippone, A. Amore Bonapasta, and M. S. Brandt
Phys. Rev. B 78, 235208 – Published 31 December 2008

Abstract

In this paper we investigate the incorporation of hydrogen in Ga1xMnxAs for samples with x0.005 grown by metal-organic vapor-phase epitaxy and with 0.03<x<0.05 grown by low-temperature molecular-beam epitaxy. The anisotropic electron-paramagnetic-resonance (EPR) signal observed for the paramagnetic Ga1xMnxAs samples with x0.005 after hydrogenation is characteristic for Mn2+ substitutional on the Ga site. Contributions of crystal fields to the EPR signal indicative of Mn-H complexes with H atoms near the Mn are negligibly small. The relative volume increase in a single MnGa-As atom pair upon hydrogenation ΔVH/VMn-As0.14±0.07 as deduced from a comparison of the high-resolution x-ray diffraction 2Θ/Ω scans of as-grown and hydrogenated samples with 0.03<x<0.05 is expected for Mn-H complex formation. However, the accuracy of this measurement is not sufficient to draw unambiguous conclusions about the specific nature of the Mn-H configuration. Extended x-ray absorption fine-structure (EXAFS) analysis and x-ray absorption near-edge spectroscopy (XANES) on samples with 0.03<x<0.05 show no indication for bond-centered Mn-H complexes as determined from a detailed comparison of the EXAFS Fourier transforms and the XANES spectra with the simulations. The overwhelming structural evidence of these techniques therefore points to comparatively large distances between the Mn and the H atoms at least in Ga1xMnxAs films with Mn concentrations above 0.005, which would be the case for either complexes with the hydrogen atom in the antibonding position or for compensation via isolated interstitial hydrogen.

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  • Received 18 September 2008

DOI:https://doi.org/10.1103/PhysRevB.78.235208

©2008 American Physical Society

Authors & Affiliations

C. Bihler1,*, G. Ciatto2, H. Huebl1, G. Martinez-Criado3, P. J. Klar4, K. Volz5, W. Stolz5, W. Schoch6, W. Limmer6, F. Filippone7, A. Amore Bonapasta7, and M. S. Brandt1

  • 1Walter Schottky Institut, Technische Universität München, Am Coulombwall 3, 85748 Garching, Germany
  • 2Synchrotron SOLEIL, L’Orme des Merisiers, Saint-Aubin, Boîte Postale 48, 91192 Gif-sur-Yvette Cedex, France
  • 3Experiments Division, European Synchrotron Radiation Facility, 38043 Grenoble, France
  • 4Institute of Experimental Physics I, Justus Liebig University, Heinrich-Buff-Ring 16, 35392 Giessen, Germany
  • 5Department of Physics and Material Sciences Center, Phillipps University, Renthof 5, 35032 Marburg, Germany
  • 6Institut für Halbleiterphysik, Universität Ulm, 89069 Ulm, Germany
  • 7CNR, Istituto di Struttura della Materia (ISM), Via Salaria Km 29.5, Cassella Postale 10, 00016 Monterotondo Stazione, Italy

  • *christoph.bihler@wsi.tum.de

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Vol. 78, Iss. 23 — 15 December 2008

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