Raman signature to identify the structural transition of single-wall carbon nanotubes under high pressure

Mingguang Yao, Zhigang Wang, Bingbing Liu, Yonggang Zou, Shidan Yu, Wang Lin, Yuanyuan Hou, Shoufu Pan, Mingxing Jin, Bo Zou, Tian Cui, Guangtian Zou, and B. Sundqvist
Phys. Rev. B 78, 205411 – Published 10 November 2008

Abstract

Raman spectra of single-walled carbon nanotubes (SWNTs) with diameters of 0.6–1.3 nm have been studied under high pressure. A “plateau” in the pressure dependence of the G-band frequencies was observed in all experiments, both with and without pressure transmission medium. Near the onset of the G-band plateau, the corresponding radial breathing mode (RBM) lines become very weak. A strong broadening of the full width at half maximum of the RBMs just before the onset of the G-band plateau suggests that a structural transition starts in the SWNTs. Raman spectra from SWNTs released from different pressures also indicate that a significant structural transition occurs during the G-band plateau process. Simulations of the structural changes and the corresponding Raman modes of a nanotube under compression show a behavior similar to the experimental observations. Based on the experimental results and the theoretical simulation, a detailed model is suggested for the structural transition of SWNTs, corresponding to the experimentally obtained Raman results in the high-pressure domain.

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  • Received 5 April 2007

DOI:https://doi.org/10.1103/PhysRevB.78.205411

©2008 American Physical Society

Authors & Affiliations

Mingguang Yao1, Zhigang Wang2,3,4, Bingbing Liu1,*, Yonggang Zou1, Shidan Yu1, Wang Lin1, Yuanyuan Hou1, Shoufu Pan2,3, Mingxing Jin2, Bo Zou1, Tian Cui1, Guangtian Zou1, and B. Sundqvist5

  • 1State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China
  • 2Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012, China
  • 3State Key Laboratory of Theoretical and Computational Chemistry, Institute of Theoretical Chemistry, Jilin University, Changchun 130023, China
  • 4Shanghai Institute of Applied Physics, Chinese Academy of Sciences, P.O. Box 800-204, Shanghai 201800, China
  • 5Department of Physics, Umeå University, 90187 Umeå, Sweden

  • *liubb@jlu.edu.cn; comments on the theoretical simulation should be addressed to wangzg@jlu.edu.cn

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Issue

Vol. 78, Iss. 20 — 15 November 2008

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