Mobility in semiconducting graphene nanoribbons: Phonon, impurity, and edge roughness scattering

Tian Fang, Aniruddha Konar, Huili Xing, and Debdeep Jena
Phys. Rev. B 78, 205403 – Published 4 November 2008

Abstract

The transport properties of carriers in semiconducting graphene nanoribbons are studied by comparing the effects of phonon, impurity, and line-edge roughness scattering. It is found that scattering from impurities located at the surface of nanoribbons and from acoustic phonons are as important as line-edge roughness scattering. The relative importance of these scattering mechanisms varies with the temperature, Fermi-level location, and the width of the ribbons. Based on the analysis, strategies for improvement of low-field mobility are described.

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  • Received 1 July 2008

DOI:https://doi.org/10.1103/PhysRevB.78.205403

©2008 American Physical Society

Authors & Affiliations

Tian Fang, Aniruddha Konar, Huili Xing, and Debdeep Jena*

  • Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA

  • *djena@nd.edu

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Issue

Vol. 78, Iss. 20 — 15 November 2008

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