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Spin-dependent tunneling of single electrons into an empty quantum dot

S. Amasha, K. MacLean, Iuliana P. Radu, D. M. Zumbühl, M. A. Kastner, M. P. Hanson, and A. C. Gossard
Phys. Rev. B 78, 041306(R) – Published 28 July 2008
Physics logo See Synopsis: Spins arriving, on the dot

Abstract

Using real-time charge sensing and gate pulsing techniques we measure the ratio of the rates for tunneling into the excited and ground spin states of a single-electron quantum dot at an AlGaAs/GaAs interface in a magnetic field parallel to the interface. We find that the ratio decreases with increasing magnetic field until tunneling into the excited spin state is completely suppressed. However, we find that by adjusting the voltages on the surface gates to change the orbital configuration of the dot, we can restore tunneling into the excited spin state and that the ratio reaches a maximum when the dot is symmetric.

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  • Received 13 June 2008

DOI:https://doi.org/10.1103/PhysRevB.78.041306

©2008 American Physical Society

Synopsis

Spins arriving, on the dot

Published 5 August 2008

Measurements show that the tunneling of electrons through a quantum dot has a complex dependence on magnetic field and the shape of the dot. These results challenge existing pictures of spin-dependent tunneling in quantum dot devices.

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Authors & Affiliations

S. Amasha1,*, K. MacLean1, Iuliana P. Radu1, D. M. Zumbühl2, M. A. Kastner1, M. P. Hanson3, and A. C. Gossard3

  • 1Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
  • 2Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland
  • 3Materials Department, University of California, Santa Barbara, California 93106-5050, USA

  • *Current address: Department of Physics, Stanford University, Stanford, California 94305, USA: samasha@stanford.edu

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Issue

Vol. 78, Iss. 4 — 15 July 2008

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