Electron paramagnetic resonance studies of silicon-related defects in diamond

A. M. Edmonds, M. E. Newton, P. M. Martineau, D. J. Twitchen, and S. D. Williams
Phys. Rev. B 77, 245205 – Published 11 June 2008; Erratum Phys. Rev. B 82, 249901 (2010)

Abstract

We report the results of multifrequency electron paramagnetic resonance studies at temperatures between 8 and 300 K on diamonds synthesized by chemical vapor deposition and intentionally silicon doped with isotopes in natural abundance or isotopically enriched. The S29i hyperfine structure has provided definitive evidence for the involvement of silicon in two electron paramagnetic resonance centers in diamond that were previously suspected to involve silicon: KUL1 and KUL3. We present data that unambiguously identify KUL1 as an S=1 neutral silicon split-vacancy (D3d symmetry) defect (V-Si-V)0, while KUL3 is shown to be (V-Si-V)0 decorated with a hydrogen atom, (V-Si-V:H)0.

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  • Received 7 February 2008

DOI:https://doi.org/10.1103/PhysRevB.77.245205

©2008 American Physical Society

Erratum

Erratum: Electron paramagnetic resonance studies of silicon-related defects in diamond [Phys. Rev. B 77, 245205 (2008)]

A. M. Edmonds, M. E. Newton, P. M. Martineau, D. J. Twitchen, and S. D. Williams
Phys. Rev. B 82, 249901 (2010)

Authors & Affiliations

A. M. Edmonds and M. E. Newton*

  • Department of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom

P. M. Martineau

  • DTC Research Centre, Belmont Road, Maidenhead, Berkshire SL6 6JW, United Kingdom

D. J. Twitchen and S. D. Williams

  • Element Six Ltd., King’s Ride Park, Ascot, Berkshire SL5 8BP, United Kingdom

  • *m.e.newton@warwick.ac.uk

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Issue

Vol. 77, Iss. 24 — 15 June 2008

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