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Effect of gauge-field interaction on fermion transport in two dimensions: Hartree conductivity correction and dephasing

T. Ludwig, I. V. Gornyi, A. D. Mirlin, and P. Wölfle
Phys. Rev. B 77, 235414 – Published 11 June 2008

Abstract

We consider the quantum corrections to the conductivity of fermions interacting via a Chern–Simons gauge field and concentrate on the Hartree-type contributions. The first-order Hartree approximation is only valid in the limit of weak coupling λg1/2 to the gauge field (g1 is the dimensionless conductance) and results in an antilocalizing conductivity correction λ2gln2T. In the case of strong coupling, an infinite summation of higher-order terms is necessary, which includes both the virtual (renormalization of the frequency) and real (dephasing) processes. At intermediate temperatures, T0TgT0, where T01/g2τ and τ is the elastic scattering time, the T dependence of the conductivity is determined by the Hartree correction, δσH(T)δσH(gT0)g1/2(T/T0)1/2[1+ln(gT0/T)1/2], so that σ(T) increases with lowering T. At low temperatures, TT0, the temperature-dependent part of the Hartree correction assumes a logarithmic form with a coefficient of order unity, δσHln(1/T). As a result, the negative exchange contribution δσexlngln(1/T) becomes dominant, which yields localization in the limit of T0. We further discuss dephasing at strong coupling and show that the dephasing rates are of the order of T, owing to the interplay of inelastic scattering and renormalization. On the other hand, the dephasing length is anomalously short, LφLT, where LT is the thermal length. For the case of composite fermions with long-range Coulomb interaction, the gauge-field propagator is less singular. The resulting Hartree correction has the usual sign and temperature dependence, δσHlngln(1/T), and for realistic g is overcompensated by the negative exchange contribution due to the gauge-boson and scalar parts of the interaction. In this case, the dephasing length Lφ is of the order of LT for not too low temperatures and exceeds LT for TgT0.

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  • Received 14 April 2008

DOI:https://doi.org/10.1103/PhysRevB.77.235414

©2008 American Physical Society

Authors & Affiliations

T. Ludwig1, I. V. Gornyi2,3,*, A. D. Mirlin2,3,4,†, and P. Wölfle2,3,4

  • 1Instituut-Lorentz, Universiteit Leiden, P.O. Box 9506, 2300 RA Leiden, The Netherlands
  • 2Institut für Nanotechnologie, Forschungszentrum Karlsruhe, 76021 Karlsruhe, Germany
  • 3Center for Functional Nanostructures, Universität Karlsruhe, 76128 Karlsruhe, Germany
  • 4Institut für Theorie der kondensierten Materie, Universität Karlsruhe, 76128 Karlsruhe, Germany

  • *Also at A.F. Ioffe Physico-Technical Institute, 194021 St. Petersburg, Russia.
  • Also at Petersburg Nuclear Physics Institute, 188300 St. Petersburg, Russia.

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Issue

Vol. 77, Iss. 23 — 15 June 2008

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