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Water on silicon (001): C defects and initial steps of surface oxidation

O. Warschkow, S. R. Schofield, N. A. Marks, M. W. Radny, P. V. Smith, and D. R. McKenzie
Phys. Rev. B 77, 201305(R) – Published 22 May 2008

Abstract

The recent literature has now firmly attributed the common C defect on the Si(001) surface to the dissociative adsorption of water. This work, by examining the dynamical properties of the C defect at elevated temperatures (450K), establishes the missing mechanistic link between dissociative water adsorption and wet surface oxidation. Scanning tunneling microscopy and density functional theory in combination reveal in detail the various paths by which a water molecule breaks apart on the surface and inserts oxygen atoms into the surface.

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  • Received 16 March 2008

DOI:https://doi.org/10.1103/PhysRevB.77.201305

©2008 American Physical Society

Authors & Affiliations

O. Warschkow1, S. R. Schofield2, N. A. Marks1, M. W. Radny2, P. V. Smith2, and D. R. McKenzie1

  • 1Centre for Quantum Computer Technology, School of Physics, The University of Sydney, Sydney NSW 2006, Australia
  • 2School of Mathematical and Physical Sciences, The University of Newcastle, Callaghan NSW 2308, Australia

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Issue

Vol. 77, Iss. 20 — 15 May 2008

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