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Electronic contribution to friction on GaAs: An atomic force microscope study

Yabing Qi, J. Y. Park, B. L. M. Hendriksen, D. F. Ogletree, and M. Salmeron
Phys. Rev. B 77, 184105 – Published 7 May 2008

Abstract

The electronic contribution to friction at semiconductor surfaces was investigated by using a Pt-coated tip with 50 nm radius in an atomic force microscope sliding against an n-type GaAs(100) substrate. The GaAs surface was covered by an approximately 1 nm thick oxide layer. Charge accumulation or depletion was induced by the application of forward or reverse bias voltages. We observed a substantial increase in friction force in accumulation (forward bias) with respect to depletion (reverse bias). We propose a model based on the force exerted by the trapped charges that quantitatively explains the experimental observations of excess friction.

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  • Received 23 January 2008

DOI:https://doi.org/10.1103/PhysRevB.77.184105

©2008 American Physical Society

Authors & Affiliations

Yabing Qi1,2, J. Y. Park2, B. L. M. Hendriksen2, D. F. Ogletree2, and M. Salmeron2,3

  • 1Applied Science and Technology Graduate Group, University of California, Berkeley, California 94720, USA
  • 2Materials Sciences Division, Lawrence Berkeley National Laboratory, University of California, Berkeley, California 94720, USA
  • 3Department of Materials Sciences and Engineering, University of California, Berkeley, California 94720, USA

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Issue

Vol. 77, Iss. 18 — 1 May 2008

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